features fast switching r - 1 diffused junction low leakage low forward voltage drop mechanical data case: jedec r--1,molded plastic terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode weight: 0.007ounces, 0.20 grams mounting position: any ratings at 25 ambient temperature unless otherwise specified. s i n g l e pha s e , h a l f w a v e , 6 0 h z , r e s i s t i v e o r i n du c t i v e l oa d . f o r c apa c i t i v e l o ad , d e r a t e by 2 0 % . un i t s m a x i m um r e c u rr e nt p e ak r e v e r s e v ol t a ge v rrm v ma x imum rms v olt a ge v rms v ma x imum dc b lo c king v olt ag e v dc v maximum average forw ard rectified current 9.5mm lead length, @t a =75 peak forw ard surge current 8.3 m s s i n g l e h a l f - s i n e - w a v e superimposed on rated load t j =125 maximum instantaneous forw ard voltage @ 0.5 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 ma x imum r ev er s e r e c ov er y t ime ( note1 ) t rr ns typical junction capacitance (note2) c j pf operating junction temperature range t j storage temperature range t stg 2. mersured at 1mh z and applied rev erse v oltage of 4.0v. 15 v o l t a g e r a n g e : 1000 -- - 20 00 v current: 0.5 a 300 7 0 0 840 980 1050 1120 1260 1400 1000 1200 1400 1500 1600 1800 2000 1f10 1F12 1f14 1f15 1f16 1f18 1f20 1000 1200 1400 1500 1600 1800 2000 -55 ---- + 150 i f(av) a i fsm i r a a note: 1. rev erse recov ery test conditions:i f =0.5a,i r =-1.0a,i rr =-0.25a. -55 ---- + 150 easily cleaned with alcohol,isopropanol and similar solvents maximum ratings and electrical characteristics 0.5 1 f 1 0 --- 1 f 20 high current capability p h o t o fl a s h r e c t i f i e r s 5.0 100.0 1.8 25.0 dimensions in millimeters www.diode.kr diode semiconductor korea
amperes amperes 1 f 10 - - - 1 f 20 ambient temperature, number of cycles at 60hz notes: 1. rise time = 7ns ma x. input impeda nce =1m . 22pf. ggggggggg 2.rise time =10ns max.source impedance=50 . fig. 1 -- forward derati ng curve average forward rectified current fi g.2 -- peak forward surge current peak forward surge current fig. 3 -- test ci rcui t diagram and reverse recovery ti me characteri sti c set time base for 50/100 ns/cm pulse generator (note2) d.u.t. 1 nonin- ductive 50 n 1. 10 n1. oscilloscope (note 1) (+) 25vdc (approx) (-) t rr 1cm +0 . 5 a 0 - 0 . 25a - 1 . 0 a 0 1 10 100 t j =125 8.3ms single half sine - wave 10 20 30 25 50 75 100 125 150 single phase half wave 60h z resistive or inductive load 200 175 0.1 0.2 0.3 0.4 0 . 5 0 diode semiconductor korea www.diode.kr
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